MG300Q2YS40

silicon N channel IGBT, 1200 V, 300A, 1800W, high input impedance, high speed, low saturation voltage

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Price:: US $100.00~170.00 / piece [Get Latest Price]

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	US $100.00~170.00

PartNumber:: MG300Q2YS40

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-14

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Part Number:MG300Q2YS40
US $100.00 - 170.00
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Product Summary

The MG300Q2YS40 is a silicon N channel IGBT. It is suitable for high power switching applications and motor control applications.

Parametrics

MG300Q2YS40 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC IC: 300A; 1ms ICP: 600A; (4)Forward current, DC IF: 300A; 1ms IFM: 600A; (5)Collector power dissipation, (Tc = 25℃) PC: 1800W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500V; (9)Screw torque (Terminal / mounting): 3/3 Nm.

Features

MG300Q2YS40 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement-mode; (5)the electrodes are isolated from case; (6)weight: 550g typ.