(China (Mainland))
Product Summary
The SKM195GAL124DN is a Low Loss IGBT Module.
Parametrics
SKM195GAL124DN absolute maximum ratings: (1)VCES: 1200V; (2)IC: 260/180 A at Ta=25℃, 520/360 A at Tp=1ms; (3)VGES: ±20V; (4)Tvj: -40 to 150℃; (5)Visol: 2500V; (8)IF: 200(160)A; (9)IFRM: 520A(360);(10)IFSM: 1450A.
Features
SKM195GAL124DN features: (1)N channel, homogeneous silicon structure NPT-IGBT; (2)Low saturation voltage; (3)Low inductance case; (4)Low tail current with low temperature dependence; (5)High short circuit capability, self limiting to 6Icnom; (6)Fast soft inverse CAL diodes; (7)Without hard mould; (8)Large clearence and creepage distance.
Diagrams
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