Product Summary
The BSM50GD120DN2 is an IGBT Power Module.
Parametrics
BSM50GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200V; (3)DC collector current: 72A; (4)Chip temperature: + 150 ℃; (5)Storage temperature: -55 ... + 150℃; (6)Thermal resistance, chip case: ≤ 0.35 K/W; (7)Diode thermal resistance, chip case: ≤ 0.7 K/W; (8)Insulation test voltage: 2500 Vac; (9)Creepage distance: 16mm.
Features
BSM50GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A FL BRIDGE |
Data Sheet |
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BSM50GD120DN2E3226 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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BSM50GD120DN2G |
Infineon Technologies |
IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
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