(China (Mainland))
Product Summary
The MRF136Y is a RF power field-effect transistor. It is designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
Parametrics
MRF136Y absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR: 65 Vdc; (3)Gate–Source Voltage VGS: ±40 Vdc; (4)Drain Current — Continuous ID: 5.0 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 100 W; Derate above 25℃: 0.571 W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.
Features
MRF136Y features: (1)Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Broadband Gain = 14 dB (Typ) Efficiency = 54% (Typical); (2)Small-signal and Large-signal Characterization; (3)100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR; (4)Space Saving Package For Push-pull Circuit Applications; (5)Excellent Thermal Stability, Ideally Suited For Class A Operation; (6)Facilitates Manual Gain Control, ALC and Modulation Techniques.
Diagrams
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 MRF136Y |
Other |
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Data Sheet |
Negotiable |
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