(China (Mainland))
Product Summary
The D882P is a Si NPN transistor.
Parametrics
D882P absolute maximum ratings: (1)Collector-Base Voltage, BVCBO: 40 V; (2)Collector-Emitter Voltage, BVCEO: 30 V; (3)Emitter-Base Voltage, BVEBO: 5 V; (4)Collector Dissipation, Tcase= 25℃, PCM: 10 W; Tamb= 25℃, PCM: 1 W; (5)Collector Current, DC, ICM: 3 A; Pulse ,Icp: 7 A; (6)Base Current, IB: 0.6 A; (7)Junction Temperature, Tj: +150 ℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
D882P features: (1)Collector-Emitter voltage: BVCBO= 40V ; (2)Collector current up to 3A ; (3)High hFElinearity.
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 D882 |
Other |
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Data Sheet |
Negotiable |
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D882SS |
Other |
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Data Sheet |
Negotiable |
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